Low-Temperature and High-Quality Growth of Bi₂O₂Se Layered Semiconductors <i>via</i> Cracking Metal–Organic Chemical Vapor Deposition

Ternary metal-oxy-chalcogenides are emerging as next-generation layered semiconductors beyond binary metal-chalcogenides (i.e., MoS2). Among ternary metal-oxy-chalcogenides, especially Bi2O2Se has been demonstrated in field-effect transistors and photodetectors, exhibiting ultrahigh performance with robust air stability. The growth method for that reported so far is a powder sublimation based chemical vapor deposition. first step pursuing the practical application of semiconductor material developing gas-phase process. Here, we report cracking metal-organic deposition (c-MOCVD) Bi2O2Se. resulting films at very low temperature (?300 °C) show single-crystalline quality. By taking advantage growth, precise phase control was by modulating partial pressure each precursor. In addition, c-MOCVD-grown exhibits outstanding electrical optoelectronic room without passivation, including maximum electron mobility 127 cm2/(V·s) photoresponsivity 45134 A/W.